Title :
A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL
Author :
Washio, Katsuyoshi ; Kondo, Masao ; Ohue, Eiji ; Oda, Katsuya ; Hayami, Reiko ; Tanabe, Masamichi ; Shimamto, H. ; Harada, Takashi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
9/1/2001 12:00:00 AM
Abstract :
A 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-μm-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing
Keywords :
CVD coatings; Ge-Si alloys; emitter-coupled logic; heterojunction bipolar transistors; isolation technology; semiconductor materials; vapour phase epitaxial growth; 0.2 micron; 107 GHz; 6.7 ps; ECL gate delay time; MIM capacitor; Si cap; SiGe; SiGe heterojunction bipolar transistor; SiGe multilayer; Ti salicide electrode; UHV/CVD; chemical mechanical polishing; dual deep trench isolation; four-level interconnect; high-Q inductor; maximum oscillation frequency; self-aligned selective epitaxial growth; shallow trench isolation; Cutoff frequency; Delay effects; Electrodes; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Isolation technology; MIM capacitors; Nonhomogeneous media; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
