Title :
Piezoresistive characteristics of short-channel MOSFETs on (100) silicon
Author :
Bradley, Arthur T. ; Jaeger, Richard C. ; Suhling, Jeffrey C. ; Connor, Kevin J O
Author_Institution :
Dept. of Electr. Eng., Tennessee Univ., Knoxville, TN, USA
fDate :
9/1/2001 12:00:00 AM
Abstract :
This paper demonstrates that the intrinsic piezoresistive response of the MOSFET channel is independent of length. The reported fall-off of the piezoresistive response of the transistor in short channel devices is shown to be the result of parasitic series resistance in the source of the transistor. At the same time, the experimental results demonstrate that the threshold voltage of the devices is essentially independent of stress. The results are verified for three independent processes
Keywords :
MOSFET; piezoresistance; (100) silicon; Si; mechanical stress; parasitic series resistance; piezoresistive characteristics; short-channel MOSFET; threshold voltage; Degradation; Digital circuits; FETs; MOSFETs; Packaging; Piezoresistance; Silicon; Stress; Threshold voltage; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
