DocumentCode
1522649
Title
Piezoresistive characteristics of short-channel MOSFETs on (100) silicon
Author
Bradley, Arthur T. ; Jaeger, Richard C. ; Suhling, Jeffrey C. ; Connor, Kevin J O
Author_Institution
Dept. of Electr. Eng., Tennessee Univ., Knoxville, TN, USA
Volume
48
Issue
9
fYear
2001
fDate
9/1/2001 12:00:00 AM
Firstpage
2009
Lastpage
2015
Abstract
This paper demonstrates that the intrinsic piezoresistive response of the MOSFET channel is independent of length. The reported fall-off of the piezoresistive response of the transistor in short channel devices is shown to be the result of parasitic series resistance in the source of the transistor. At the same time, the experimental results demonstrate that the threshold voltage of the devices is essentially independent of stress. The results are verified for three independent processes
Keywords
MOSFET; piezoresistance; (100) silicon; Si; mechanical stress; parasitic series resistance; piezoresistive characteristics; short-channel MOSFET; threshold voltage; Degradation; Digital circuits; FETs; MOSFETs; Packaging; Piezoresistance; Silicon; Stress; Threshold voltage; Voltage measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.944190
Filename
944190
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