The Effects of Dual-Active-Layer Modulation on a Low-Temperature Solution-Processed Oxide Thin-Film Transistor

Author

Jeong, Woong Hee ; Kim, Kyung Min ; Kim, Dong Lim ; Rim, You Seung ; Kim, Hyun Jae

Author_Institution

Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

Volume

59

Issue

8

fYear

2012

Firstpage

2149

Lastpage

2152

Abstract

We applied dual-active-layer (DAL) modulation to solution-processed AlInZnO (AIZO)/InZnO (IZO) DAL thin-film transistors (TFTs) to realize high performance at 350°C. The electrical characteristics of the DAL TFTs were affected by the In-versus-Zn ratio of each channel and the thickness of the IZO. This caused a difference in the carrier concentrations of the two channels and also changed the energy barrier height at the junction between the channels. A DAL TFT with optimized carrier concentration and energy barrier height yielded a competitive field-effect mobility of 5.62 cm²/V · s, a high ON/OFF ratio of 9.0 × 10⁶, and a steep subthreshold swing of 0.53 V/dec.

Keywords

II-VI semiconductors; aluminium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; AlInZnO-InZnO; DAL TFT; DAL modulation; carrier concentrations; dual-active-layer modulation; energy barrier height; low-temperature solution-processed oxide thin-film transistor; optimized carrier concentration; Educational institutions; Electric variables; Energy barrier; Iron; Thin film transistors; Zinc; Dual-active-layer (DAL) modulation; In-versus-Zn ratio; oxide semiconductor; solution process; thickness;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2198064

Filename

6204080