Title :
A 600-V 10-A trench bipolar junction diode with superior static and dynamic characteristics
Author :
You, Budong ; Huang, Alex Q. ; Sin, Johnny K O
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
9/1/2001 12:00:00 AM
Abstract :
In this paper, 600-V, 10-A trench bipolar junction diodes (TBJDs) fabricated utilizing a new self-aligned trench process is characterized and reported. For the first time, the TBJD has experimentally demonstrated, compared to the conventional P-i-N diode, not only superior reverse recovery characteristics, but also lower on-state voltage drops and the unchanged reverse leakage current levels at elevated temperature. The relationship between the diode performance and the design parameters of the TBJD is also discussed in this paper
Keywords :
power semiconductor diodes; 10 A; 600 V; design parameters; dynamic characteristics; on-state voltage drop; power electronics; reverse leakage current; reverse recovery; self-aligned trench etching process; static characteristics; trench bipolar junction diode; Anodes; Frequency; Leakage current; P-i-n diodes; Power electronics; Schottky diodes; Semiconductor diodes; Silicon compounds; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
