Title :
Trap characterization in buried-gate n-channel 6H-SiC JFETs
Author :
Meneghesso, Gaudenzio ; Chini, A. ; Verzellesi, G. ; Cavallini, A. ; Canali, Claudio ; Zanoni, Enrico
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
Abstract :
We present a detailed characterization of deep traps present in buried gate, n-channel 6H-SiC JFETs, based on transconductance measurements as a function of frequency. Four different deep levels have been identified, which are characterized by activation energies of 0.16, 0.18, 0.28, and 0.54 eV. Furthermore, based on the transconductance frequency dispersion features (upward or downward dispersion), we have been able to infer that three deep levels (0.16, 0.18 and 0.54 eV) are hole traps localized in the p-gate layer and one (0.28 eV) is an electron trap localized in the n-channel.
Keywords :
deep levels; electric admittance; electron traps; hole traps; junction gate field effect transistors; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 0.16 to 0.54 eV; SiC; activation energies; buried-gate n-channel 6H-SiC JFETs; deep traps; frequency dependence; localized electron trap; localized hole traps; p-gate layer; transconductance frequency dispersion features; transconductance measurements; trap characterization; Dispersion; Electron traps; Frequency; Gallium nitride; Irrigation; JFETs; Silicon carbide; Temperature distribution; Thermal conductivity; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
