A novel single gate MOS controlled current saturated thyristor

Author

Huang, S. ; Amaratunga, G.A.J. ; Udrea, F.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

22

Issue

9

fYear

2001

Firstpage

438

Lastpage

440

Abstract

A novel single gate MOS controlled current saturation thyristor (MCST) device is proposed. In the on-state the MCST operates in thyristor-like mode at low anode voltage and enters the IGBT-like mode automatically with increasing anode voltage, offering a low on-state voltage drop and current saturation capability. Simulation results based on 6.5 kV trench devices indicate the turn-off energy loss of the MCST is reduced by over 35% compared to the IGBT. The saturation current density of the MCST is strongly dependent on the on-set voltage of the p/sup +/ buffer/n-well junction, leading to its excellent safe operation area (SOA) and making it suitable for high power applications.

Keywords

MOS-controlled thyristors; current density; semiconductor device models; 6.5 kV; IGBT-like mode; MCST; current saturation capability; high power applications; low anode voltage; on-set voltage; on-state voltage drop; p/sup +/ buffer/n-well junction; safe operation area; saturation current density; short-circuit performance; simulation results; single gate MOS controlled current saturated thyristor; thyristor-like mode; trench devices; turn-off energy loss; Anodes; Automatic control; Cathodes; Doping profiles; Energy loss; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Semiconductor optical amplifiers; Thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.944332

Filename

944332