Title :
Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain
Author :
Choi, Yang-Kyu ; Ha, Daewon ; King, Tsu-Jae ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Nanoscale ultrathin body (UTB) p-channel MOSFETs with body thickness down to 4 nm and raised source and drain (S/D) using selectively deposited Ge are demonstrated for the first time. Devices with gate length down to 30 nm show high drive current, low off current, and excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge in the ultrathin body are investigated.
Keywords :
MOSFET; carrier mobility; chemical vapour deposition; germanium; nanotechnology; semiconductor device measurement; 30 nm; 4 nm; Ge-Si; LPCVD; body thickness; gate length; high drive current; inversion charge quantum confinement; low off current; mobility enhancement; nanoscale ultrathin body PMOSFETs; p-channel MOSFETs; raised selective germanium source/drain; selectively deposited Ge; short-channel behavior; threshold-voltage shift; CMOS process; Fabrication; Germanium; Inorganic materials; MOSFETs; Parasitic capacitance; Potential well; Silicon compounds; Threshold voltage; Tin;
Journal_Title :
Electron Device Letters, IEEE
