DocumentCode :
1522935
Title :
A 0.12 mm ^{2} 7.4 \\mu W Micropower Temperature Sensor With an Inaccuracy of
Author :
Souri, Kamran ; Makinwa, Kofi A A
Author_Institution :
Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands
Volume :
46
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
1693
Lastpage :
1700
Abstract :
This paper describes the design of a CMOS smart temperature sensor intended for RFID applications. The PNP-based sensor uses a digitally-assisted readout scheme that reduces the complexity and area of the analog circuitry and simplifies trimming. A key feature of this scheme is an energy-efficient two-step zoom ADC that combines a coarse 5-bit SAR conversion with a fine 10-bit ΣΔ conversion. After a single trim at 30°C, the sensor achieves an inaccuracy of ±0.2°C (3σ) from -30°C to 125°C. It also achieves a resolution of 15 mK at a conversion rate of 10 Hz. The sensor occupies only 0.12 mm2 in a 0.16 μm CMOS process, and draws 4.6 μA from a 1.6 V to 2 V supply. This corresponds to a minimum power dissipation of 7.4 μW, the lowest ever reported for a precision temperature sensor.
Keywords :
CMOS integrated circuits; analogue integrated circuits; analogue-digital conversion; intelligent sensors; radiofrequency identification; sigma-delta modulation; temperature sensors; ΣΔ conversion; CMOS smart temperature sensor; PNP-based sensor; RFID applications; SAR conversion; analog circuitry; current 4.6 muA; digitally-assisted readout scheme; energy-efficient two-step zoom ADC; micropower temperature sensor; power 7.4 muW; size 0.16 mum; temperature -30 degC to 125 degC; voltage 1.6 V to 2 V; Accuracy; Capacitors; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Transistors; SAR; sigma-delta modulation; smart sensors; temperature sensor;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2011.2144290
Filename :
5772034
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