Title :
Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs
Author :
Raskin, J.P. ; Dambrine, G. ; Gillon, R.
Author_Institution :
Lab. d´´Hyperfrequences, Univ. Catholique de Louvain, Belgium
fDate :
12/1/1997 12:00:00 AM
Abstract :
A new extraction scheme is proposed which allows to determine all the series equivalent circuit elements values from S-parameters measurements at a single bias point in saturation. Exploiting the specific shape of a set of impedance loci, the new scheme uses linear regression techniques to solve the extraction problem. The resulting algorithm is very simple and efficient when compared to optimizer-driven approaches
Keywords :
MOSFET; S-parameters; equivalent circuits; semiconductor device models; silicon-on-insulator; S-parameters measurement; SOI MOSFET; algorithm; impedance loci; linear regression; parameter extraction; saturation; series equivalent circuit; small-signal model; Calibration; Equivalent circuits; Frequency; Impedance; Linear regression; MOSFET circuits; Parameter extraction; Scattering parameters; Shape; Silicon on insulator technology;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
