The recovery behavior of semi-insulating GaAs in electron-beam-controlled switches

Author

Stoudt, David C. ; Schoenbach, Karl H. ; Brinkmann, Ralf Peter ; Lakdawala, Vishnu K. ; Gerdin, Glenn A.

Author_Institution

Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA

Volume

37

Issue

12

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2478

Lastpage

2485

Abstract

Semi-insulating GaAs is experimentally studied with respect to its application in electron-beam-controlled switches. The dark current through the switch is measured both before and after electron-beam irradiation. A lock-on effect, similar to that seen in photoconductive switches, is observed after the electron beam is terminated. This effect is characterized by the switch current continuing to flow, locked to a certain voltage, as long as the voltage is applied across the switch. A possible explanation for this effect, based on the process of electron and hole injection at the contacts, is presented. A method to minimize double injection is offered to make the electron-beam-controlled switch, along with the photoconductive switch, practical for use as both an opening and closing switch

Keywords

III-V semiconductors; electron beam applications; gallium arsenide; semiconductor switches; GaAs; closing switch; dark current; double injection; electron injection; electron-beam irradiation; electron-beam-controlled switches; hole injection; lock-on effect; opening switch; semi-insulating material; switch current; Dielectric materials; Electron beams; Gallium arsenide; Optical control; Optical switches; Photoconducting materials; Photoconductivity; Radiative recombination; Semiconductor materials; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.64521

Filename

64521