Photoconductive switching in diamond under high bias field

Author

Feng, Shangting ; Ho, P.-T. ; Goldhar, Julius

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

37

Issue

12

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2511

Lastpage

2516

Abstract

The limits of high-power, high-repetition-rate operation of photoconductive switches utilizing diamond are explored. To evaluate diamond as a photoconductor for high-power switching applications, the following experiments were performed: (1) measurement of switch resistance as a function of the bias electric field; (2) measurement of switch resistance as a function of laser intensity; (3) measurement of dependence of photoconductive response on the polarity of illuminated contact; and (4) evaluation of high repetition rate switching by using multiple laser pulse excitation

Keywords

diamond; elemental semiconductors; photoconducting devices; semiconductor switches; C; bias electric field; high bias field; high-power switching applications; laser intensity; multiple laser pulse excitation; photoconductive switches; photoconductor; polarity; switch resistance; Contact resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Laser excitation; Optical pulses; Performance evaluation; Photoconductivity; Pulse measurements; Switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.64526

Filename

64526