• DocumentCode
    152311
  • Title

    Phase change materials for reconfigurable systems

  • Author

    Sanphuang, Varittha ; Ghalichechian, Nima ; Nahar, Niru K. ; Volakis, J.L.

  • Author_Institution
    Electroscience Lab., Ohio State Univ., Columbus, OH, USA
  • fYear
    2014
  • fDate
    6-11 July 2014
  • Firstpage
    209
  • Lastpage
    209
  • Abstract
    Reconfigurability is a vital feature of future RF, millimeter Wave and terahertz systems for sensing, imaging, wireless, and satellite communications. Indeed significant efforts have been devoted to develop tunable systems in the past among them are RF MEMS switches. But, in practice, these solutions have not been widely implemented due to a need for high voltage actuation, lack of flexibility for integration, reliability issues, and high cost. In contrast to traditional RF MEMS, phase change materials (PCMs) present a major opportunity to address the shortcomings listed above. Among them, vanadium dioxide (VO2) shows insulator-to-metal transition (IMT) properties with large conductivity change on the order of ~104 at relatively low temperature of Tc ~70 °C. The fundamental mechanism that explains IMT is still unclear. However, unlike other approaches, VO2 films can be monolithically integrated onto antenna structure or feed networks using microfabrication process.
  • Keywords
    microfabrication; microswitches; millimetre waves; phase change materials; reconfigurable architectures; vanadium compounds; IMT properties; PCM; RF MEMS switches; RF systems; VO2; insulator-to-metal transition properties; microfabrication process; millimeter wave; phase change materials; reconfigurable systems; satellite communications; terahertz systems; wireless communications; Argon; Conductivity; Films; Phase change materials; Radio frequency; Sputtering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Science Meeting (Joint with AP-S Symposium), 2014 USNC-URSI
  • Conference_Location
    Memphis, TN
  • Type

    conf

  • DOI
    10.1109/USNC-URSI.2014.6955591
  • Filename
    6955591