DocumentCode
152311
Title
Phase change materials for reconfigurable systems
Author
Sanphuang, Varittha ; Ghalichechian, Nima ; Nahar, Niru K. ; Volakis, J.L.
Author_Institution
Electroscience Lab., Ohio State Univ., Columbus, OH, USA
fYear
2014
fDate
6-11 July 2014
Firstpage
209
Lastpage
209
Abstract
Reconfigurability is a vital feature of future RF, millimeter Wave and terahertz systems for sensing, imaging, wireless, and satellite communications. Indeed significant efforts have been devoted to develop tunable systems in the past among them are RF MEMS switches. But, in practice, these solutions have not been widely implemented due to a need for high voltage actuation, lack of flexibility for integration, reliability issues, and high cost. In contrast to traditional RF MEMS, phase change materials (PCMs) present a major opportunity to address the shortcomings listed above. Among them, vanadium dioxide (VO2) shows insulator-to-metal transition (IMT) properties with large conductivity change on the order of ~104 at relatively low temperature of Tc ~70 °C. The fundamental mechanism that explains IMT is still unclear. However, unlike other approaches, VO2 films can be monolithically integrated onto antenna structure or feed networks using microfabrication process.
Keywords
microfabrication; microswitches; millimetre waves; phase change materials; reconfigurable architectures; vanadium compounds; IMT properties; PCM; RF MEMS switches; RF systems; VO2; insulator-to-metal transition properties; microfabrication process; millimeter wave; phase change materials; reconfigurable systems; satellite communications; terahertz systems; wireless communications; Argon; Conductivity; Films; Phase change materials; Radio frequency; Sputtering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Meeting (Joint with AP-S Symposium), 2014 USNC-URSI
Conference_Location
Memphis, TN
Type
conf
DOI
10.1109/USNC-URSI.2014.6955591
Filename
6955591
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