DocumentCode :
1523129
Title :
A 0.06 mm 
11 mW Local Oscillator for the GSM Standard in 65 nm CMOS
Author :
Toso, Stefano Dal ; Bevilacqua, Andrea ; Tiebout, Marc ; Da Dalt, Nicola ; Gerosa, Andrea ; Neviani, Andrea
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
Volume :
45
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
1295
Lastpage :
1304
Abstract :
GSM-compliant local oscillator consuming a tiny die area of only 0.06 mm and drawing 9 mA from a 1.2 V supply has been designed in a 65 nm CMOS process using thin-oxide devices only. The system is made of a 13 to 15 GHz LC VCO followed by a divide-by-four injection-locked frequency divider. The divider employs a ring oscillator-based topology leading to a two octave locking range with limited area and power consumption. The phase noise at the output of the divider is below -133 dBc/Hz at 3 MHz offset over the tuning range.
Keywords :
CMOS integrated circuits; MMIC oscillators; cellular radio; frequency dividers; network topology; voltage-controlled oscillators; CMOS process; GSM standard; LC VCO; current 9 mA; divide-by-four injection-locked frequency divider; frequency 13 GHz to 15 GHz; frequency 3 MHz; local oscillator; ring oscillator-based topology; size 65 nm; thin-oxide devices; voltage 1.2 V; CMOS process; CMOS technology; Circuits; Frequency conversion; GSM; Inductors; Injection-locked oscillators; Phase noise; Voltage; Voltage-controlled oscillators; CMOS; GSM; frequency divider; injection locking; voltage controlled oscillator;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2049457
Filename :
5492325
Link To Document :
