Title :
InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
Author :
André, Ph ; Blayac, Sylvain ; Berdaguer, Ph ; Benchimol, Jean-Louis ; Godin, Jean ; Kaffmann, N. ; Konczykowska, Agnieszka ; Kasbari, Abed-Elhak ; Riet, Muriel
Author_Institution :
R&D, France Telecom, Marcoussis, France
fDate :
9/1/2001 12:00:00 AM
Abstract :
High-performance technologies and adequate design methodologies are required to address the needs of very high-speed ICs (VHSICs) for over 40 Gb/s optical communications. We describe improvements we have introduced in our InP DHBT technology, and how our design methodology has evolved, we show how it results in improved circuit designs, and present some recent results, with some considerations on measurement limitations
Keywords :
III-V semiconductors; bipolar digital integrated circuits; circuit CAD; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; optical communication equipment; optical fibre networks; very high speed integrated circuits; 40 Gbit/s; DHBT technology; InGaAs-InP; InGaAs/InP; VHSICs; circuit designs; design methodology; measurement limitations; optical communication circuits; Circuit synthesis; DH-HEMTs; Design methodology; Forward error correction; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Wavelength division multiplexing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
