InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits

Author

André, Ph ; Blayac, Sylvain ; Berdaguer, Ph ; Benchimol, Jean-Louis ; Godin, Jean ; Kaffmann, N. ; Konczykowska, Agnieszka ; Kasbari, Abed-Elhak ; Riet, Muriel

Author_Institution

R&D, France Telecom, Marcoussis, France

Volume

36

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1321

Lastpage

1327

Abstract

High-performance technologies and adequate design methodologies are required to address the needs of very high-speed ICs (VHSICs) for over 40 Gb/s optical communications. We describe improvements we have introduced in our InP DHBT technology, and how our design methodology has evolved, we show how it results in improved circuit designs, and present some recent results, with some considerations on measurement limitations

Keywords

III-V semiconductors; bipolar digital integrated circuits; circuit CAD; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; optical communication equipment; optical fibre networks; very high speed integrated circuits; 40 Gbit/s; DHBT technology; InGaAs-InP; InGaAs/InP; VHSICs; circuit designs; design methodology; measurement limitations; optical communication circuits; Circuit synthesis; DH-HEMTs; Design methodology; Forward error correction; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.944658

Filename

944658