Industrial application of heterostructure device simulation

Author

Palankovski, Vassil ; Quay, Rüdiger ; Selberherr, Siegfried

Author_Institution

Inst. fur Mikroelektronik, Tech. Univ. Wien, Austria

Volume

36

Issue

9

fYear

2001

Firstpage

1365

Lastpage

1370

Abstract

We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMOS-NT are presented in good agreement with measured data. The simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.

Keywords

III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; III-V compound semiconductor; MINIMOS-NT; heterojunction bipolar transistor; heterostructure RF device simulation; high electron mobility transistor; industrial application; transport model; two-dimensional hydrodynamic simulation; Bipolar transistors; Circuit simulation; Computational modeling; HEMTs; Heterojunction bipolar transistors; Hydrodynamics; MODFETs; Predictive models; Process control; Semiconductor devices;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.944664

Filename

944664