Title :
Transistor noise in SiGe HBT RF technology
Author :
Niu, Guofu ; Jin, Zhenrong ; Cressler, John D. ; Rapeta, Rao ; Joseph, Alvin J. ; Harame, David
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fDate :
9/1/2001 12:00:00 AM
Abstract :
This brief presents experimental and modeling results of device noise in SiGe HBT RF technology. By careful bandgap engineering, a simultaneous reduction of RF noise, 1/f noise, and phase noise has been achieved. At a given IB, transistors with different base bandgap profiles show similar 1/f noise. At a given IC, however, transistors with a higher β (and hence lower RF noise) show lower 1/f noise. Circuit analysis and simulation shows that the phase noise is reduced as well
Keywords :
1/f noise; Ge-Si alloys; energy gap; heterojunction bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f noise; RF noise; SiGe; SiGe HBT RF technology; bandgap engineering; circuit analysis; circuit simulation; phase noise; transistor model; Analytical models; Circuit analysis; Circuit noise; Germanium silicon alloys; Heterojunction bipolar transistors; Noise reduction; Phase noise; Photonic band gap; Radio frequency; Silicon germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
