Transistor noise in SiGe HBT RF technology

Author

Niu, Guofu ; Jin, Zhenrong ; Cressler, John D. ; Rapeta, Rao ; Joseph, Alvin J. ; Harame, David

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

Volume

36

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1424

Lastpage

1427

Abstract

This brief presents experimental and modeling results of device noise in SiGe HBT RF technology. By careful bandgap engineering, a simultaneous reduction of RF noise, 1/f noise, and phase noise has been achieved. At a given I_B, transistors with different base bandgap profiles show similar 1/f noise. At a given I_C, however, transistors with a higher β (and hence lower RF noise) show lower 1/f noise. Circuit analysis and simulation shows that the phase noise is reduced as well

Keywords

1/f noise; Ge-Si alloys; energy gap; heterojunction bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f noise; RF noise; SiGe; SiGe HBT RF technology; bandgap engineering; circuit analysis; circuit simulation; phase noise; transistor model; Analytical models; Circuit analysis; Circuit noise; Germanium silicon alloys; Heterojunction bipolar transistors; Noise reduction; Phase noise; Photonic band gap; Radio frequency; Silicon germanium;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.944672

Filename

944672