Title :
Charge-and-split sense amplifier for multilevel nonvolatile memories
Author :
Torelli, G. ; Calligaro, C. ; Manstretta, A. ; Pierin, A. ; Rolandi, P.
Author_Institution :
Dipartimento di Elettronica, Pavia Univ., Italy
fDate :
5/13/1999 12:00:00 AM
Abstract :
A low-voltage sense amplifier for multilevel (ML) nonvolatile memories is presented. It consists of a fully-differential current-to-voltage (I-V) converter followed by a differential amplifier. A crosscoupled NMOS pair is included to prevent simultaneous saturation of the two outputs of the I-V converter, thereby relaxing the timing requirements for output data latching. Experimental evaluations of a memory test chip demonstrated the high suitability of the amplifier for ML sensing
Keywords :
EPROM; convertors; differential amplifiers; integrated memory circuits; charge-and-split sense amplifier; crosscoupled NMOS pair; differential amplifier; fully-differential current-to-voltage converter; memory test chip; multilevel nonvolatile memories; output data latching; timing requirements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990529
