Millimeter-wave generation and characterization of a GaAs FET by optical mixing

Author

Ni, David C. ; Fetterman, Harold R. ; Chew, Wilbert

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

38

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

608

Lastpage

614

Abstract

Coherent mixing of optical radiation from a tunable continuous-wave dye laser and a stabilized He-Ne laser was used to generate millimeter-wave signals in GaAs FETs attached to printed-circuit millimeter-wave antennas. The generated signal was further down-converted to a 2-GHz IF by an antenna-coupled millimeter-wave local oscillator at 62 GHz. Detailed characterizations of power and S/N under different bias conditions have been performed. This technique is expected to allow signal generation and frequency-response evaluation of millimeter-wave devices at frequencies as high as 100 GHz

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; microwave generation; optoelectronic devices; solid-state microwave devices; 2 to 100 GHz; EHF; GaAs; GaAs FETs; IF; MM-wave characterization; MM-wave generation; antenna-coupled millimeter-wave local oscillator; bias conditions; characterizations; down-converted; frequency-response evaluation; generate millimeter-wave signals; optical coherent mixing; optical mixing; printed-circuit millimeter-wave antennas; semiconductors; signal generation; stabilized He-Ne laser; tunable continuous-wave dye laser; Character generation; FETs; Frequency; Gallium arsenide; Laser stability; Local oscillators; Millimeter wave technology; Optical mixing; Signal generators; Tunable circuits and devices;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.54929

Filename

54929