Title :
Optically pumped continuous-wave operation of InAlGaAs-InAlAs-InP based 1.55 μm vertical-cavity surface-emitting laser with SiO2 -TiO2 dielectric mirror
Author :
Jong-Hyeob Back ; Han, Won Seok ; Cho, Hyung Koun ; Lee, Bun ; Choi, In Hoon
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea
fDate :
5/13/1999 12:00:00 AM
Abstract :
A vertical-cavity surface-emitting laser operating at 1.55 μm has been demonstrated by CW photopumping up to 260 K. The structure consists of an InAlGaAs-InAlAs bottom mirror grown on InP substrate, a 2λ thick active region which has a periodic gain structure with 27 InAlGaAs-InGaAs quantum wells, and an SiO2-TiO2 dielectric top mirror. The input threshold power density has a minimum value of 3.4 kW/cm2 at 220 K
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser mirrors; laser transitions; optical pumping; quantum well lasers; surface emitting lasers; 1.55 mum; 2 A; 220 K; CW photopumping; InAlGaAs-InAlAs; InAlGaAs-InAlAs bottom mirror; InAlGaAs-InAlAs-InP; InAlGaAs-InGaAs quantum wells; InP substrate; SiO2-TiO2; SiO2-TiO2 dielectric mirror; SiO2-TiO2 dielectric top mirror; active region; input threshold power density; optically pumped continuous-wave operation; periodic gain structure; quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990556
