Title :
Computationally efficient implementation of charge sheet model [MOSFET]
Author :
Gildenblat, G. ; Chen, T.L. ; Bendix, P.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
5/13/1999 12:00:00 AM
Abstract :
An improved method for computing the surface potential at the drain end of the MOSFET inversion channel is presented. The approach is generic and can be used with different surface potential based MOSFET models. The new algorithm is verified by comparison with numerical computations and experimental data for deep submicron MOSFETs
Keywords :
MOSFET; semiconductor device models; surface potential; MOSFET inversion channel; charge sheet model; computationally efficient implementation; deep submicron MOSFETs; surface potential;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990522
