Title :
Laterally stacked varactor formed by ion implantation
Author :
Knights, A.P. ; Kelly, M.J.
Author_Institution :
Sch. of Electron. Eng., Surrey Univ., Guildford, UK
fDate :
5/13/1999 12:00:00 AM
Abstract :
Planar, MMIC compatible, multi-junction varactors have been fabricated using a single n-type epitaxial layer followed by multiple energy Mg+ ion implantation. The junctions, numbering between 1 and 4 (=N), were formed laterally by selective implantation masking. Current-voltage measurements of the devices show the benefits of the stacking with breakdown voltage almost proportional to N
Keywords :
MMIC; ion implantation; microwave diodes; semiconductor device breakdown; semiconductor epitaxial layers; varactors; GaAs:Mg; MMIC compatible varactors; breakdown voltage; current-voltage measurements; ion implantation; laterally stacked varactor; multiple energy Mg+ implants; planar multijunction varactors; selective implantation masking; single n-type epitaxial layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990579
