Title :
Low-voltage, high-speed AlSb-InAsSb HEMTs
Author :
Boos, J.B. ; Yang, M.J. ; Bennett, B.R. ; Park, D. ; Kruppa, W. ; Bass, R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
5/13/1999 12:00:00 AM
Abstract :
Antimonide-based HEMTs have been fabricated with an InAsSb channel. Infra-red photoluminescence measurements at 5 K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I. These HEMTs with 0.1 μm gate length exhibit decreased output conductance and improved voltage gain. At VDS=0.6 V, a microwave transconductance of 700 mS/mm and an output conductance of 110 mS/mm were obtained corresponding to a voltage gain of 6
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.1 micron; 110 mS/mm; 700 mS/mm; AlSb-InAsSb; IR photoluminescence measurements; InAsSb channel; Sb-based HEMTs; high-speed HEMTs; low-voltage operation; microwave transconductance; output conductance; staggered type I heterojunction lineup; voltage gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990536
