• DocumentCode
    1523642
  • Title

    Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser

  • Author

    Chen, S.M. ; Zhou, K.J. ; Zhang, Zhenhua Yu ; Wada, O. ; Childs, D.T.D. ; Hugues, Maxime ; Jin, Xinzhe ; Hogg, R.A.

  • Author_Institution
    Dept. of Electron. Eng., Univ. of Sheffield, Sheffield, UK
  • Volume
    48
  • Issue
    11
  • fYear
    2012
  • Firstpage
    644
  • Lastpage
    645
  • Abstract
    A hybrid quantum well/quantum dot active region is used to obtain simultaneous three-state lasing at room temperature, via ground state and first excited state transitions of the quantum dots and the lowest energy transition of a single quantum well. The device exhibits a threshold current density of 1125 A/cm2 for achieving simultaneous three-state lasing over ~160~nm.
  • Keywords
    current density; quantum dot lasers; quantum well lasers; excited state transitions; ground state; hybrid quantum well-quantum dot laser; lowest energy transition; room temperature simultaneous three-state lasing; temperature 293 K to 298 K; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.0710
  • Filename
    6204280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1523642