Title :
GaN-based pin diodes for microwave switching IC applications
Author :
Yang, J.G. ; Yang, Kun
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
GaN-based pin diodes were fabricated and characterised for microwave switching IC applications. The fabricated GaN pin diode with a p-metal diameter of 50 μm demonstrated a 3.8 V turn-on voltage, a 370 V breakdown voltage and a power figure of merit value of 178.5 MW/cm2 with an on-state resistance of 29 Ω and an off-state capacitance of 47 fF. To the authors best knowledge, this result is the first RF characterisation of the GaN pin diode for microwave IC applications.
Keywords :
III-V semiconductors; gallium compounds; microwave integrated circuits; p-i-n diodes; wide band gap semiconductors; GaN; RF characterisation; capacitance 47 fF; microwave switching IC applications; pin diodes; resistance 29 ohm; size 50 mum; voltage 3.8 V; voltage 370 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0954
