Title :
TDBC SOI technology to suppress floating body effect in PD SOI p-MOSFETs
Author :
Jiexin Luo ; Jing Chen ; Qingqing Wu ; Zhan Chai ; Tao Yu ; Xi Wang
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
A tunnel diode body contact (TDBC) SOI structure is presented as a means to suppress the floating body effect in partially depleted (PD) SOI p-MOSFETs. Experiments using phosphorus implantation were carried out to form the tunnel diode in the source region. Tunnel diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. The fabricated device shows the suppressed floating body effect as expected. The new structure does not enlarge device size and is fully compatible with SOI CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; silicon-on-insulator; tunnel diodes; PD SOI p-MOSFET; SOI CMOS technology; TDBC SOI technology; fabricated device; floating body effect suppression; partially depleted SOI p-MOSFET; phosphorus implantation; tunnel diode body contact SOI structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0980
