Title :
GaN based LEDs grown by molecular beam epitaxy
Author :
Grandjean, N. ; Massies, J. ; Lorenzini, P. ; Leroux, M.
Author_Institution :
CNRS, Valbonne, France
fDate :
12/4/1997 12:00:00 AM
Abstract :
GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-type doping levels are 4×1018 and 3×1017 cm-3, respectively. LEDs turn on at 3 V, and the forward voltage is 3.7 V at 20 mA. The electroluminescence peaks at 390 nm
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; molecular beam epitaxial growth; sapphire; semiconductor growth; 20 mA; 3 V; 3.7 V; 390 nm; Al2O3; GaN; GaN based LEDs; MBE growth; NH3; electroluminescence peak; forward voltage; molecular beam epitaxy; n-type doping level; p-type doping level; sapphire;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971447
