• DocumentCode
    1523703
  • Title

    GaN based LEDs grown by molecular beam epitaxy

  • Author

    Grandjean, N. ; Massies, J. ; Lorenzini, P. ; Leroux, M.

  • Author_Institution
    CNRS, Valbonne, France
  • Volume
    33
  • Issue
    25
  • fYear
    1997
  • fDate
    12/4/1997 12:00:00 AM
  • Firstpage
    2156
  • Lastpage
    2157
  • Abstract
    GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-type doping levels are 4×1018 and 3×1017 cm-3, respectively. LEDs turn on at 3 V, and the forward voltage is 3.7 V at 20 mA. The electroluminescence peaks at 390 nm
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; molecular beam epitaxial growth; sapphire; semiconductor growth; 20 mA; 3 V; 3.7 V; 390 nm; Al2O3; GaN; GaN based LEDs; MBE growth; NH3; electroluminescence peak; forward voltage; molecular beam epitaxy; n-type doping level; p-type doping level; sapphire;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971447
  • Filename
    645762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1523703