Title :
Selection of surface ohmic metal for fabricating 0.1 μm InAlAs/InGaAs heterojunction FETs with wet-chemically-recessed gates
Author :
Xu, D. ; Enoki, Tsutomu ; Ishii, Y.
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa
fDate :
12/4/1997 12:00:00 AM
Abstract :
The authors show that the profiles of gate grooves can be effectively manoeuvered by the selection of surface metals of ohmic electrodes. The Ni surface metal is advantageous over Pt, since the recess etching is independent of materials and is more spatially homogeneous. These different etching behaviours and resulting gate-groove profiles are attributed to the existence of electrochemical effects during recess etching
Keywords :
III-V semiconductors; aluminium compounds; etching; field effect transistors; gallium arsenide; indium compounds; ohmic contacts; semiconductor-metal boundaries; 0.1 micron; HFET; InAlAs-InGaAs; Ni; Pt; electrochemical effects; etching behaviour; gate groove profile; heterojunction FETs; ohmic electrodes; recess etching; surface ohmic metal selection; wet-chemically-recessed gates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971425
