Title :
High bandwidth current mode amplifier for envelope modulated RF amplifiers
Author :
Watkins, Gavin T.
Author_Institution :
Toshiba Res. Eur. Ltd., Bristol, UK
Abstract :
A high bandwidth discrete current mode amplifier capable of driving large voltages into low impedances is presented. A differential current mirror output stage ensures stability at high frequencies. Small signal bandwidth is 24 MHz and large signal bandwidth extends into the megahertz region. When amplifying the AC component of a 3 MHz 3rd generation partnership project (3GPP) long term evolution (LTE) envelope signal, an efficiency of 19.1% is achieved at 18.8 V peak-to-peak output across a 15 Ω load.
Keywords :
3G mobile communication; circuit stability; current mirrors; current-mode circuits; electric impedance; radiofrequency amplifiers; 3GPP LTE envelope signal; 3rd generation partnership project long term evolution envelope signal; AC component; bandwidth 24 MHz; differential current mirror output stage; envelope modulated RF amplifier; frequency 3 MHz; high bandwidth discrete current mode amplifier; low impedance; megahertz region; signal bandwidth; stability; voltage 18.8 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1376
