Monolithic sampling head IC

A monolithic sampling head IC composed of a resonant tunneling diode (RTD) for the sampling pulse generator and Schottky barrier diodes for the sampling bridge has been developed. The RTD was made using an In _0.53Ga_0.47As-AlAs structure (pseudomorphic strained superlattice). For this type of high switching voltage RTD, a peak-to-valley ratio (P/V ratio) of 9 at 202°C peak-to-peak switching voltages of 1.5 V or more at room temperature were achieved. The Schottky barrier diodes were made from an (In_0.53Ga_0.47As)_0.5(In_0.52Al _0.48As)_0.5 compound. A frequency bandwidth of at least 26 GHz was obtained. When attempting to use a quantum effect device (such as an RTD) in a practical application, the most important factor to consider is its reliability. Good results were achieved in an endurance test of this device, in which it was made to continuously oscillate between 600 MHz to 1 GHz at 90°C for more than 1000 h