Title :
Technology of InP-based 1.55-μm ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
Author :
Umbach, Andreas ; Engel, Thomas ; Bach, Heinz-Gunter ; Van Waasen, Stefan ; Dröge, Elmar ; Strittmatter, André ; Ebert, Wilhelm ; Passenberg, Wolfgang ; Steingrüber, Rolf ; Schlaak, Wolfgang ; Mekonnen, Gebre G. ; Unterbörsch, Günter ; Bimberg, Dieter
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
fDate :
7/1/1999 12:00:00 AM
Abstract :
For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mobile access systems using 38- or 60-GHz carrier frequencies, ultrafast photoreceivers have to be provided. Therefore, an integration concept for InP-based optoelectronic microwave monolithic integrated circuits for the 1.55-μm wavelength regime is demonstrated, which allows independent optimization of the constituting devices. Two different types of photodetectors (PDs), a waveguide-integrated PIN photodiode (PD) and a top-illuminated metal-semiconductor-metal PD, both having bandwidths of up to 70 GHz, have been developed. These are fabricated together with different amplifier designs employing high electron mobility transistors which exhibit transit frequencies of up to 90 GHz. The application to a 40-Gbit/s broadband photoreceiver for high-bit-rate time-division multiplexing systems is reported, as well as the application to 38- and 60-GHz narrow-band photoreceivers for use as optic/millimeterwave converters in mobile communication systems
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; broadband networks; indium compounds; integrated optoelectronics; mobile communication; optical receivers; optimisation; photodetectors; photodiodes; time division multiplexing; 1.55 mum; 38 GHz; 40 Gbit/s; 60 GHz; GHz carrier frequencies; GHz narrow-band photoreceivers; Gbit/s broad-band photoreceivers; Gbit/s broadband photoreceiver; InP; InP-based 1.55-μm ultrafast OEMMIC; InP-based optoelectronic microwave monolithic integrated circuits; PIN photodiode; amplifier designs; broad-band mobile access systems; high electron mobility transistors; high-bit-rate time-division multiplexing systems; independent optimization; long-haul communication systems; mobile communication systems; optic/millimeterwave converters; photodetectors; top-illuminated metal-semiconductor-metal PD; ultrafast photoreceivers; waveguide-integrated PIN PD; Bandwidth; Bit rate; Broadband amplifiers; Frequency; Integrated circuit technology; Microwave devices; Monolithic integrated circuits; Optical waveguides; PIN photodiodes; Photodetectors;
Journal_Title :
Quantum Electronics, IEEE Journal of
