Title :
5-100 GHz InP coplanar waveguide MMIC distributed amplifier
Author :
Majidi-Ahy, Reza ; Nishimoto, Clifford K. ; Riaziat, Majid ; Glenn, Michael ; Silverman, S. ; Weng, Shang-Lin ; Pao, Yi-Ching ; Zdasiuk, George A. ; Bandy, Steve G. ; Tan, Zoilo C H
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1-μm mushroom gate, InGaAs-InAlAs lattice-matched HEMTs (high electron mobility transistors) on a semi-insulating InP substrate. A coplanar waveguide was the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 μm by 860 μm
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; wideband amplifiers; 0.1 micron; 5 to 100 GHz; 5.5 dB; 5.8 dB; 95 GHz; CPW; InGaAs-InAlAs; InP; InP substrate; MMIC; coplanar waveguide; distributed amplifier; high electron mobility transistors; lattice-matched HEMTs; monolithic microwave integrated circuit; mushroom gate; single stage amplifier; wideband amplifiers; Broadband amplifiers; Coplanar waveguides; Distributed amplifiers; HEMTs; Indium phosphide; MMICs; MODFETs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
