Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs

Author

Hong, Euiyoun ; Yun, Daeyoun ; Bae, Hagyoul ; Choi, Hyunjun ; Lee, Won Hee ; Uhm, Mihee ; Seo, Hyojoon ; Lee, Jieun ; Jang, Jaeman ; Kim, Dae Hwan ; Kim, Dong Myong

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

922

Lastpage

924

Abstract

A distribution of interface states (D_it) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (E_ph <; E_g) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (V_GS <; V_T) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n- and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges D_it = 10¹⁰ - 10¹¹ cm^-2·eV^-1 with a typical U-shape.

Keywords

MOSFET; interface states; silicon-on-insulator; SODBoF; body-contactless SOI MOSFET; interface states; metal-oxide-semiconductor field-effect transistors; n-channel SOI MOSFET; p-channel SOI MOSFET; subbandgap optical differential body-factor technique; subbandgap optical source; subthreshold current-voltage characteristics; typical U-shape; virtual gate; Interface states; Logic gates; Optical pumping; Optical sensors; Photonic band gap; Threshold voltage; Differential body factor; interface states; silicon on insulator (SOI); subbandgap optical illumination; subthreshold slope;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2194981

Filename

6204316