DocumentCode :
1523851
Title :
Contributions to the large blue emission shift in a GaAsSb type-II laser
Author :
Chow, Weng W. ; Spahn, Olga Blum ; Schneider, Hans Christian ; Klem, John F.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
37
Issue :
9
fYear :
2001
fDate :
9/1/2001 12:00:00 AM
Firstpage :
1178
Lastpage :
1182
Abstract :
The large blue shift in the emission with excitation in a GaAsSb-based type-II quantum well is investigated experimentally and theoretically. Comparison of theory with experiment is made for lasers with “W” type-II structures. The analysis shows the blue shift to be the result of charge-separation, band-distortion, and many-body interactions. For a high threshold gain, there is an additional contribution from the n=2 subband transition
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser beams; laser theory; laser transitions; quantum well lasers; spectral line shift; surface emitting lasers; GaAsSb; GaAsSb type-II laser; GaAsSb-based type-II quantum well; W type-II structures; band-distortion; blue emission shift; blue shift; charge-separation; excitation; high threshold gain; large blue emission shift; many-body interactions; n=2 subband transition; type-II laser; type-II quantum well; Gallium arsenide; Laser excitation; Laser theory; Laser transitions; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.945323
Filename :
945323
Link To Document :
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