Contributions to the large blue emission shift in a GaAsSb type-II laser

Author

Chow, Weng W. ; Spahn, Olga Blum ; Schneider, Hans Christian ; Klem, John F.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

37

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1178

Lastpage

1182

Abstract

The large blue shift in the emission with excitation in a GaAsSb-based type-II quantum well is investigated experimentally and theoretically. Comparison of theory with experiment is made for lasers with “W” type-II structures. The analysis shows the blue shift to be the result of charge-separation, band-distortion, and many-body interactions. For a high threshold gain, there is an additional contribution from the n=2 subband transition

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; laser beams; laser theory; laser transitions; quantum well lasers; spectral line shift; surface emitting lasers; GaAsSb; GaAsSb type-II laser; GaAsSb-based type-II quantum well; W type-II structures; band-distortion; blue emission shift; blue shift; charge-separation; excitation; high threshold gain; large blue emission shift; many-body interactions; n=2 subband transition; type-II laser; type-II quantum well; Gallium arsenide; Laser excitation; Laser theory; Laser transitions; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.945323

Filename

945323