Spot-size converter integrated semiconductor optical amplifiers for optical gate applications

Author

Kitamura, Shotaro ; Hatakeyama, Hiroshi ; Hamamoto, Kiichi ; Sasaki, Tatsuya ; Komatsu, Keiro ; Yamaguchi, Masaki

Author_Institution

Div. of Compound Semicond. Device, NEC Corp., Kawasaki, Japan

Volume

35

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1067

Lastpage

1074

Abstract

A spot-size converter integrated semiconductor optical amplifier (SSC-SOA) was developed as a gate element in an optical switch matrix for photonic switching applications. By a selective metal-organic vapor phase epitaxy technique, a bulk InGaAsP stripe, including an active region and thickness tapered SSCs, was grown. Wavelength composition of the stripe, strain on the stripe, and electrode coverage above the SSC region were optimized. As a result, gate operation for fiber-to-fiber gain of 0 dB was achieved at a low injection current of 30 mA, and the polarization dependence of the gain was eliminated as well

Keywords

electro-optical switches; electrodes; integrated optics; photonic switching systems; semiconductor optical amplifiers; 0 dB; 30 mA; InGaAsP; active region; bulk InGaAsP stripe; fiber-to-fiber gain; gate element; low injection current; optical gate applications; optical switch matrix; photonic switching applications; polarization dependence; selective metal-organic vapor phase epitaxy; spot-size converter integrated semiconductor optical amplifiers; thickness tapered SSC; wavelength composition; Epitaxial growth; Epitaxial layers; Integrated optics; Matrix converters; National electric code; Optical amplifiers; Optical fiber polarization; Optical switches; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.772178

Filename

772178