Title :
Spot-size converter integrated semiconductor optical amplifiers for optical gate applications
Author :
Kitamura, Shotaro ; Hatakeyama, Hiroshi ; Hamamoto, Kiichi ; Sasaki, Tatsuya ; Komatsu, Keiro ; Yamaguchi, Masaki
Author_Institution :
Div. of Compound Semicond. Device, NEC Corp., Kawasaki, Japan
fDate :
7/1/1999 12:00:00 AM
Abstract :
A spot-size converter integrated semiconductor optical amplifier (SSC-SOA) was developed as a gate element in an optical switch matrix for photonic switching applications. By a selective metal-organic vapor phase epitaxy technique, a bulk InGaAsP stripe, including an active region and thickness tapered SSCs, was grown. Wavelength composition of the stripe, strain on the stripe, and electrode coverage above the SSC region were optimized. As a result, gate operation for fiber-to-fiber gain of 0 dB was achieved at a low injection current of 30 mA, and the polarization dependence of the gain was eliminated as well
Keywords :
electro-optical switches; electrodes; integrated optics; photonic switching systems; semiconductor optical amplifiers; 0 dB; 30 mA; InGaAsP; active region; bulk InGaAsP stripe; fiber-to-fiber gain; gate element; low injection current; optical gate applications; optical switch matrix; photonic switching applications; polarization dependence; selective metal-organic vapor phase epitaxy; spot-size converter integrated semiconductor optical amplifiers; thickness tapered SSC; wavelength composition; Epitaxial growth; Epitaxial layers; Integrated optics; Matrix converters; National electric code; Optical amplifiers; Optical fiber polarization; Optical switches; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
