DocumentCode :
1523875
Title :
AlGaN/GaN MISHEMTs With High- 
Gate Dielectric
Author :
Yang, Shu ; Huang, Sen ; Chen, Hongwei ; Zhou, Chunhua ; Zhou, Qi ; Schnee, Michael ; Zhao, Qing-Tai ; Schubert, Jürgen ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume :
33
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
979
Lastpage :
981
Abstract :
A high-κ LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high ION/IOFF of 109, a maximum drain current of 820 mA/mm at VGS = 3 V, a peak transconductance (Gm) of ~ 192 mS/mm, and a steep subthreshold slope (SS) of ~ 73 mV/dec.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; high electron mobility transistors; high-k dielectric thin films; lanthanum compounds; lutetium compounds; wide band gap semiconductors; AlGaN-GaN; LaLuO3; MISHEMT; high-κ gate dielectric thin film; metal-insulator-semiconductor high-electron-mobility transistors; planar process; steep subthreshold slope; voltage 3 V; Aluminum gallium nitride; Dielectrics; Gallium nitride; HEMTs; Leakage current; Logic gates; MODFETs; $hbox{LaLuO}_{3}$ $kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2195291
Filename :
6204320
Link To Document :
