GaN on Si HEMT with 65% power added efficiency at 10 GHz

A 65% power added efficiency (PAE) at 10 GHz for a AlGaN/GaN high electron mobility transistor on silicon substrate is presented. This PAE is achieved with an associated output power of 6.1 W/mm and an associated gain of 13.1 dB for a 400 μm gate-width transistor biased at 40 V drain voltage. Epitaxial AlGaN/GaN layers are grown on 4-inch silicon substrate. Nitride defined 0.25 μm T-gate process, which allows formation of an integrated field plate, is used for these devices. A source-connected second field plate is also implemented to improve device performance at high operation voltage.