Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

Author

Defrance, Nicolas ; Douvry, Y. ; Hoel, Virginie ; Gerbedoen, J.-C. ; Soltani, Ali ; Rousseau, M. ; De Jaeger, J.C. ; Langer, Robert ; Lahreche, H.

Author_Institution

IEMN, Lille Univ., Villeneuve dAscq, France

Volume

46

Issue

13

fYear

2010

Firstpage

949

Lastpage

950

Abstract

In this reported work, the thermal resistance of AlGaN/GaN HEMTs processed on SopSiC composite substrate is determined by electrical I-V pulsed measurement. SopSiC substrate is based on an innovative structure with a thin Si single crystal layer transferred on top of a thick polycrystalline SiC wafer. For the first time, it is demonstrated that the thermal resistivity of such devices reaches 18.9 K mm/W when 7.5 W/mm power is dissipated, while 23.5 K mm/W are measured on silicon in the same conditions. This result shows the capabilities of composite substrates to compete with silicon for microwave power applications.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; pulse measurement; semiconductor device measurement; silicon compounds; thermal resistance; AlGaN-GaN; HEMT; SiC; SopSiC composite substrate; electrical I-V pulsed measurement; microwave power application; thermal resistance; thermal resistivity; thick polycrystalline SiC wafer; thin Si single crystal layer;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2010.0431

Filename

5493552