Picosecond optoelectronic measurement of S parameters and optical response of an AlGaAs/GaAs HBT

Author

Matloubian, M. ; Fetterman, H. ; Kim, M. ; Oki, A. ; Camou, J. ; Moss, S. ; Smith, D.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

38

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

683

Lastpage

686

Abstract

The S parameters of an AlGaAs/GaAs heterojunction bipolar transistor (HBT) are measured using a picosecond optoelectronic system. The measured S parameters show qualitatively good agreement with those obtained using a conventional vector network analyzer. The optical response of the HBT is also measured using this system by directly illuminating the base-collector region. Used as a phototransistors, the HBT shows pulse widths with full-width half-maximum (FWHM) as short at 15 ps

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; phototransistors; 15 ps; AlGaAs-GaAs; HBT; S parameters; base-collector region; full-width half-maximum; heterojunction bipolar transistor; optical response; phototransistors; picosecond optoelectronic system; pulse widths; vector network analyzer; Bandwidth; Circuit testing; Fixtures; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit measurements; Millimeter wave measurements; Scattering parameters; Semiconductor devices;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.54944

Filename

54944