DocumentCode :
1524165
Title :
Giant magneto-impedance effect in layered thin films
Author :
Morikawa, Takeshi ; Nishibe, Yuji ; Yamadera, Hideya ; Nonomura, Yutaka ; Takeuchi, Masaharu ; Taga, Yasunori
Author_Institution :
Electronic Device Div., Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Volume :
33
Issue :
5
fYear :
1997
fDate :
9/1/1997 12:00:00 AM
Firstpage :
4367
Lastpage :
4372
Abstract :
Giant Magneto-Impedance (GMI) of films with a layered structure has been studied. They are Co-Si-B/Cu/Co-Si-B, Co-Si-B/Ag/Co-Si-B, and Fe-Co-Si-B/Cu/Fe-Co-Si-B with a magnetic closed-loop structure. They also have a certain magnetic configuration, for which the uniaxial anisotropy is perpendicular to both the driving current and the external field. Consequently, both reactance X and resistance R of the films change remarkably due to the external field in the frequency range from 100 kHz to 10 MHz, at which the GMI effect hardly appears in the single layer films of the same thickness. The conductivity difference between the outer and inner layers is important in order to achieve a high impedance change ratio in this frequency range. As a result, the ratios ΔZ/|Z0|=(Zmaximum-Z[Hext=0])/Z [Hext=0] of Co-Si-B/Ag/Co-Si-B films are 440% for a field of 9 Oe at 10 MHz, and the average sensitivity is 49%/Oe. Furthermore, ΔZ/|Z0| of Co-Si-B/Cu/Co-Si-B and Co-Si-B/Ag/Co-Si-B films at 1 MHz is as much as 140%, and the average sensitivity reaches 15%/Oe. The sensitivity at 1 MHz is higher than that of single-layer magneto-impedance films of the same thickness by three orders of magnitude
Keywords :
amorphous magnetic materials; giant magnetoresistance; magnetic multilayers; 100 kHz to 10 MHz; CoSiB-Ag-CoSiB; CoSiB-Cu-CoSiB; FeCoSiB-Cu-FeCoSiB; amorphous layered thin film; conductivity; giant magneto-impedance; magnetic closed-loop structure; reactance; resistance; sensitivity; uniaxial anisotropy; Amorphous magnetic materials; Frequency; Impedance; Magnetic anisotropy; Magnetic domains; Magnetic films; Magnetic sensors; Magnetostriction; Perpendicular magnetic anisotropy; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.620448
Filename :
620448
Link To Document :
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