DocumentCode :
1524321
Title :
Metal-Base Transistor With 
Author :
Schulz, Dietmar ; Holz, Eikner ; Yusoff, Abd Rashid Bin Mohd ; Song, Ying ; Shuib, Saiful Anuar
Author_Institution :
Komax Syst. LCF SA, La Chaux-de-Fonds, Switzerland
Volume :
32
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
970
Lastpage :
972
Abstract :
In this letter, we propose an organic transistor using a C70 sandwich emitter to reduce the leakage current. An off -state leakage current that is smaller than 10-10 (minimum of 1 × 10-11 A) can be achieved (from VCE = 0-5 V and IB = 0). The substantially reduced leakage current results in an excellent on-to-off current ratio that is up to 1.8 × 106. A small magnetocurrent effect of about 15% is obtained with an optimum emitter thickness.
Keywords :
bipolar transistors; fullerene devices; fullerenes; leakage currents; C70 sandwich emitter; leakage current; magnetocurrent effect; metal-base transistor; on-to-off current ratio; organic transistor; Current measurement; Integrated circuits; Magnetic devices; Magnetic semiconductors; Magnetic tunneling; Temperature measurement; Transistors; Bipolar transistor; metal-base transistor (MBT); polymer blends;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2149493
Filename :
5772909
Link To Document :
