Title :
Projected frequency limits of GaAs MESFETs
Author :
Golio, J. Michael ; Golio, Janet R J
Author_Institution :
Motorola Gov. Electron. Group, Chandler, AZ, USA
fDate :
1/1/1991 12:00:00 AM
Abstract :
Limits to the ultimate frequency performance which can be realized with GaAs MESFETs have been projected. These predictions are based on the reported performance of 137 devices fabricated between 1966 and 1988 and on first-order modeling. The predictions indicate that ultimate maximum frequency of oscillation values may approach 700 GHz, while gain-bandwidth product values as high as 200 GHz may be realized
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave oscillators; semiconductor device models; solid-state microwave circuits; 700 GHz; GaAs; MESFETs; first-order modeling; gain-bandwidth product values; semiconductors; ultimate frequency performance; ultimate maximum frequency of oscillation; Circuits; Electrons; FETs; Frequency estimation; Gallium arsenide; HEMTs; Impedance; MESFETs; Mixers; Radio frequency;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
