DocumentCode :
1524602
Title :
Numerical Simulation on the Photovoltaic Behavior of an Amorphous-Silicon Nanowire-Array Solar Cell
Author :
Pei, Zingway ; Chang, Shu-Tong ; Liu, Chang-Wei ; Chen, Yi-Chan
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Volume :
30
Issue :
12
fYear :
2009
Firstpage :
1305
Lastpage :
1307
Abstract :
In this letter, we propose an amorphous-silicon (a-Si) solar cell with a nanowire-array structure. The proposed structure has photon absorption and carrier transport that are perpendicular to each other, which could overcome the efficiency limit of an a-Si solar cell. This nanowire structure has an n-type a-Si nanowire array in which the i-layer and the p-layer a-Si are sequentially grown along the surface of the nanowire. Under illumination, light is absorbed along the axial direction of the nanowire, and carrier transport is along the radial direction. Numerical simulations show that the photocurrent of the a-Si solar cell with a 4000-nm-long nanowire is nearly 40% more than that of a planar a-Si solar cell. A conversion efficiency of 11.6% was obtained, which is around 32% enhancement.
Keywords :
amorphous semiconductors; carrier mobility; photodetectors; solar cells; amorphous silicon; carrier transport; conversion efficiency; illumination; nanowire-array solar cell; photocurrent; photon absorption; photovoltaic behavior; radial direction; sequentially grown; Amorphous-silicon (a-Si); nanowire array; solar cell;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2033318
Filename :
5299268
Link To Document :
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