DocumentCode :
1524895
Title :
Through-wafer optical interconnection coupling characteristics
Author :
Hornak, Lawrence A.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
Volume :
24
Issue :
11
fYear :
1988
fDate :
5/26/1988 12:00:00 AM
Firstpage :
714
Lastpage :
715
Abstract :
Both the optical coupling and resulting optical crosstalk characteristics for LED-based through-wafer optical interconnections have been measured within a simulated stacked wafer environment. Using integrated SiO2 Fresnel phase plate lens arrays, a nearly 4:1 improvement in received signal was noted over the configuration without lenses. Interchannel crosstalk measurements indicate that from an optical standpoint, high interconnect densities (250 μm pitch) are obtainable with reasonable noise margins over a range of distances of interest for stacked wafer architectures
Keywords :
crosstalk; integrated circuit technology; light emitting diodes; optical couplers; optical links; photodetectors; 250 micron; Fresnel phase plate lens arrays; LED-based; PIN detector array; SiO2-Si; high interconnect densities; light emitting diodes; optical coupling; optical crosstalk; simulated stacked wafer environment; stacked wafer architectures; through-wafer optical interconnections;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
Filename :
5773
Link To Document :
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