Title :
Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
Author :
Wu, Y.H. ; Chen, W.J. ; Chang, S.L. ; Chin, Albert ; Gwo, S. ; Tsai, C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/1999 12:00:00 AM
Abstract :
We have developed a simple process to form epitaxial CoSi/sub 2/ for shallow junctions. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed by scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.
Keywords :
passivation; CoSi/sub 2/; HF; cross-sectional transmission electron microscopy; electrical characteristics; leakage current; native oxide-induced surface roughness; passivation; patterned wafers; scanning tunneling microscopy; shallow junctions; sheet resistance; thermal stability; vapor pretreatment; Electric variables; Hafnium; Passivation; Rough surfaces; Surface resistance; Surface roughness; Surface treatment; Thermal resistance; Transmission electron microscopy; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
