Electrical characteristics of new LDD poly-Si TFT structure tolerant to process misalignment

Author

Byung-Hyuk Min ; Kanicki, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

20

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

335

Lastpage

337

Abstract

A new lightly doped drain (LDD) poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced misalignment is described in this paper. Based on the experimental results, we have established that there is no difference between the bi-directional I/sub D/-V/sub G/ characteristics, and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFT. The maximum ON/OFF current ratio of about 1×10/sup 8/ is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics has been remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.

Keywords

elemental semiconductors; leakage currents; semiconductor device reliability; silicon; thin film transistors; 1.0 micron; LDD polysilicon TFT structure; ON/OFF current ratio; Si; bidirectional I/sub D/-V/sub G/ characteristics; kink effect; leakage current; lightly doped drain; output characteristics; process misalignment; symmetrical electrical characteristics; Active matrix liquid crystal displays; Amorphous silicon; Bidirectional control; Crystallization; Electric variables; Electrodes; Leakage current; Semiconductor films; Switching circuits; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.772368

Filename

772368