Title :
An analytical approximation for the excess noise factor of avalanche photodiodes with dead space
Author :
Hayat, Majeed M. ; Chen, Zikuan ; Karim, Mohammad A.
Author_Institution :
Electro-Opt. Program, Dayton Univ., OH, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
Approximate analytical expressions are derived for the mean gain and the excess noise factor of avalanche photodiodes including the effect of dead space. The analysis is based on undertaking a characteristic-equation approach to obtain an approximate analytical solution to the existing system of recurrence equations which characterize the statistics of the random multiplication gain. The analytical expressions for the excess noise factor and the mean gain are shown to be in good agreement with the exact results obtained from numerical solutions of the recurrence equations for values of the dead space reaching up to 20% of the width of the multiplication region.
Keywords :
avalanche photodiodes; semiconductor device models; semiconductor device noise; analytical model; avalanche photodiode; characteristic equation; dead space; excess noise factor; mean gain; multiplication region; recurrence equation; Avalanche photodiodes; Difference equations; Electrons; Impact ionization; Noise generators; Noise measurement; Noise reduction; Signal to noise ratio; Space exploration; Statistical analysis;
Journal_Title :
Electron Device Letters, IEEE
