Various effects of silicidation on shallow p/sup +/ junctions formed by BF/sub 2//sup +/ implantation into thin poly-Si films on Si substrates

Author

Juang, M.H.

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, China

Volume

20

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

348

Lastpage

350

Abstract

Various effects of silicidation on shallow p/sup +/ n junctions formed by the scheme that implants BF/sub 2//sup +/ ions into thin poly-Si films on Si substrates are described. A post-Ni silicidation just slightly improves the preformed junctions of the annealed sample. However, as the sample is first deposited with thin Ni films after the implantation and then annealed, the resulting junctions are much better than the preformed ones. Moreover, as the sample is deposited with Ti films, the resultant junctions are just slightly better the preformed ones.

Keywords

annealing; elemental semiconductors; ion implantation; p-n junctions; semiconductor thin films; silicon; BF/sub 2//sup +/ ion implantation; Ni silicidation; NiSi/sub 2/; Si; Si substrate; Si:BF/sub 2/; annealing; polysilicon thin film; preformed junction; shallow p/sup +/n junction; Annealing; Etching; Fabrication; Implants; Leakage current; Process control; Semiconductor films; Silicidation; Silicides; Temperature dependence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.772372

Filename

772372