Title :
An 0.35-μm, 6-m/spl Omega/, 43 μ/spl Omega/-cmsub 2 lateral power MOSFET for low-voltage, megahertz switching power applications
Author :
Sun, N.X. ; Huang, A.Q.
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
Power MOSFET technology has to be improved significantly in order to address the needs of very low voltage power conversion applications such as that powers the future microprocessor. Detailed studies by the author indicate that device technology that is suitable for this type of application is not the conventional vertical power MOSFET technology; instead, a lateral power MOSFET technology based on the VLSI technology is more suitable. We report for the first time the experimental result of a 6-m/spl Omega/, 43 μ/spl Omega/-cm2 lateral power MOSFET based on 0.35-μm VLSI design rule. With a gate-charge of only about 3 nC, in terms of on-resistance gate-charge product, these results are the best ever reported for sub-20-V power MOSFET.
Keywords :
field effect transistor switches; low-power electronics; power MOSFET; power semiconductor switches; 0.35 micron; 20 V; 6 mohm; VLSI technology; gate charge; lateral power MOSFET; low voltage power conversion; megahertz switching; microprocessor; on-resistance; Low voltage; MOSFET circuits; Microprocessors; Power MOSFET; Power conversion; Power dissipation; Power supplies; Sun; Switching loss; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE