DocumentCode :
15250
Title :
Total Ionizing Dose Radiation Effects in Al2O 
-Gated Ultra-Thin Body In 
Ga
Author :
Sun, Xinghua ; Xue, Feng ; Chen, Jiann-Jong ; Zhang, E.X. ; Cui, Shuguang ; Lee, Jeyull ; Fleetwood, D.M. ; Ma, T.P.
Author_Institution :
Electr. Eng. Dept., Yale Univ., New Haven, CT, USA
Volume :
60
Issue :
1
fYear :
2013
fDate :
Feb. 2013
Firstpage :
402
Lastpage :
407
Abstract :
We have investigated total ionizing dose (TID) radiation effects in Al2O3-gated ultra-thin body In0.7Ga0.3 As MOSFETs. A non-monotonic dependence of the threshold voltage (Vth) on the X-ray radiation dose was observed and analyzed; the accompanying degradation in subthreshold swing (SS) likely is caused by non-uniform trapped charge in the near-interfacial Al2O3 rather than interface-trap generation. The off-current and gate breakdown voltage were independent of dose up to 6 Mrad(SiO2). Compared to the InP-free device, the device with an InP barrier is more vulnerable to TID effects in terms of Vth shift, SS, and mobility degradation.
Keywords :
III-V semiconductors; MOSFET; X-ray effects; alumina; carrier mobility; gallium arsenide; indium compounds; nuclear electronics; semiconductor device breakdown; Al2O3-InP-In0.7Ga0.3As; Al2O3-gated ultrathin body; InP barrier; InP-free device; MOSFET; TID effects; X-ray radiation dose; gate breakdown voltage; interface-trap generation; mobility degradation; nonmonotonic dependence; nonuniform trapped charge; off-current breakdown voltage; subthreshold swing degradation; threshold voltage; total ionizing dose radiation effects; Annealing; Dielectrics; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFETs; Radiation effects; Al$_{2}$ $_{3}$
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2237522
Filename :
6414616
Link To Document :
