Double-doped In/sub 0.35/Al/sub 0.65/As/In/sub 0.35/Ga/sub 0.65/As power heterojunction FET on GaAs substrate with 1 W output power

Author

Contrata, W. ; Iwata, N.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

Volume

20

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

369

Lastpage

371

Abstract

A double-doped metamorphic In/sub 0.35/Al/sub 0.65/As/In/sub 0.35/Ga/sub 0.65/As power heterojunction FET (HJFET) on GaAs substrate is demonstrated. The HJFET exhibits good dc characteristics, with gate forward turn on voltage of 1.0 V, breakdown voltage of 20 V, and maximum drain current of 490 mA/mm. Under RF operation at a frequency of 950 MHz, a power added efficiency of 63% with associated output power of 31.7 dBm is obtained at a gate width of 12.8 mm. This large gate width and state-of-the-art power performance in metamorphic HJFETS were enabled by a selective etching, sputtered WSi gate process and low surface roughness due to an Al/sub 0.60/Ga/sub 0.40/As/sub 0.69/Sb/sub 0.31/ strain relief buffer.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; junction gate field effect transistors; power field effect transistors; semiconductor doping; 1 W; 63 percent; 950 MHz; AlGaAsSb strain relief buffer; GaAs; GaAs substrate; In/sub 0.35/Al/sub 0.65/As-In/sub 0.35/Ga/sub 0.65/As; double-doped InAlAs/InGaAs metamorphic power heterojunction FET; selective etching; sputtered WSi gate; surface roughness; Breakdown voltage; Capacitive sensors; FETs; Gallium arsenide; Heterojunctions; Power generation; Radio frequency; Rough surfaces; Sputter etching; Surface roughness;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.772379

Filename

772379